Higher Capacity Flash memory.
Metal nanocrystals can more than double memory capacity
Flash memory is in nearly every handheld gadget, from digital cameras to iPhones. Now Nanosys, a startup based in Palo Alto, CA, says it has found a material that can double the capacity of flash memory found in conventional chips by adding self-assembled metal nanocrystals to the flash manufacturing process. Nanosys, which has shown that the tiny particles of metal are compatible with today's manufacturing processes, has deals with flash makers Intel and Micron Technologies and expects that metal nanocrystals will be in products as early as 2009.
The new technology could be a boon to the rapidly growing flash industry. The capacity of electronic memory has steadily increased over the years, tracking with Moore's Law, which predicts that the number of transistors on a chip will double every two years. However, the dimensions of individual memory cells in flash chips are only shrinking in the horizontal direction, and not the vertical direction, due to material and physical constraints.
The new technology could be a boon to the rapidly growing flash industry. The capacity of electronic memory has steadily increased over the years, tracking with Moore's Law, which predicts that the number of transistors on a chip will double every two years. However, the dimensions of individual memory cells in flash chips are only shrinking in the horizontal direction, and not the vertical direction, due to material and physical constraints.
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